Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14590008Application Date: 2015-01-06
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Publication No.: US09331200B1Publication Date: 2016-05-03
- Inventor: Lanxiang Wang , Hong Liao , Chao Jiang , Duan Quan Liao , Ye Chao Li
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: CN201410799048 20141219
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/417 ; H01L29/161 ; H01L29/45
Abstract:
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a gate structure thereon; and forming a first epitaxial layer, a second epitaxial layer, and a silicide layer in the substrate adjacent to the gate structure. Preferably, the first epitaxial layer, the second epitaxial layer, and the silicide layer comprise SiGeSn.
Information query
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