Invention Grant
- Patent Title: Devices with cavity-defined gates and methods of making the same
- Patent Title (中): 具有腔定义门的器件及其制造方法
-
Application No.: US14198937Application Date: 2014-03-06
-
Publication No.: US09331203B2Publication Date: 2016-05-03
- Inventor: Werner Juengling
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Fletcher Yoder, P.C.
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78
Abstract:
Disclosed are methods, systems and devices, including a method that includes the acts of forming a semiconductor fin, forming a sacrificial material adjacent the semiconductor fin, covering the sacrificial material with a dielectric material, forming a cavity by removing the sacrificial material from under the dielectric material, and forming a gate in the cavity.
Public/Granted literature
- US20140183626A1 DEVICES WITH CAVITY-DEFINED GATES AND METHODS OF MAKING THE SAME Public/Granted day:2014-07-03
Information query
IPC分类:
