Invention Grant
- Patent Title: Oxide material and semiconductor device
- Patent Title (中): 氧化物材料和半导体器件
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Application No.: US13444132Application Date: 2012-04-11
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Publication No.: US09331206B2Publication Date: 2016-05-03
- Inventor: Shunpei Yamazaki , Motoki Nakashima
- Applicant: Shunpei Yamazaki , Motoki Nakashima
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2011-096611 20110422
- Main IPC: H01L29/786
- IPC: H01L29/786 ; C01G19/02
Abstract:
Stable electrical characteristics are given to a transistor and a highly reliable semiconductor device is provided. In addition, an oxide material which enables manufacture of such a semiconductor device is provided. An oxide film is used in which two or more kinds of crystalline portions which are different from each other in a direction of an a-axis or a direction of a b-axis in an a-b plane (or the top surface, or the formation surface) are included, and each of the crystalline portions is c-axis aligned, has at least one of triangular atomic arrangement and hexagonal atomic arrangement when seen from a direction perpendicular to the a-b plane, a top surface, or a formation surface, includes metal atoms arranged in a layered manner, or metal atoms and oxygen atoms arranged in a layered manner along the c-axis, and is expressed as In2SnZn2O7(ZnO)m (m is 0 or a natural number).
Public/Granted literature
- US20120267622A1 OXIDE MATERIAL AND SEMICONDUCTOR DEVICE Public/Granted day:2012-10-25
Information query
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