Invention Grant
- Patent Title: Electronic gate enhancement of Schottky junction solar cells
- Patent Title (中): 肖特基结太阳能电池的电子门极增强
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Application No.: US13580205Application Date: 2011-04-27
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Publication No.: US09331217B2Publication Date: 2016-05-03
- Inventor: Andrew Gabriel Rinzler , Pooja Wadhwa , Jing Guo , Gyungseon Seol
- Applicant: Andrew Gabriel Rinzler , Pooja Wadhwa , Jing Guo , Gyungseon Seol
- Applicant Address: US FL Gainesville
- Assignee: University of Florida Research Foundation, Inc.
- Current Assignee: University of Florida Research Foundation, Inc.
- Current Assignee Address: US FL Gainesville
- Agency: Wolf, Greenfield & Sacks, P.C.
- International Application: PCT/US2011/034107 WO 20110427
- International Announcement: WO2011/139754 WO 20111110
- Main IPC: H01L31/0224
- IPC: H01L31/0224 ; H01L31/07

Abstract:
Various systems and methods are provided for Schottky junction solar cells. In one embodiment, a solar cell includes a mesh layer formed on a semiconductor layer and an ionic layer formed on the mesh layer. The ionic layer seeps through the mesh layer and directly contacts the semiconductor layer. In another embodiment, a solar cell includes a first mesh layer formed on a semiconductor layer, a first metallization layer coupled to the first mesh layer, a second high surface area electrically conducting electrode coupled to the first metallization layer by a gate voltage, and an ionic layer in electrical communication with the first mesh layer and the second high surface area electrically conducting electrode. In another embodiment, a solar cell includes a grid layer formed on a semiconductor layer and an ionic layer in electrical communication with the grid layer and the semiconductor layer.
Public/Granted literature
- US20120312371A1 ELECTRONIC GATE ENHANCEMENT OF SCHOTTKY JUNCTION SOLAR CELLS Public/Granted day:2012-12-13
Information query
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