Invention Grant
- Patent Title: Directly bonded, lattice-mismatched semiconductor device
- Patent Title (中): 直接键合，晶格失配的半导体器件
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Application No.: US14152464Application Date: 2014-01-10
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Publication No.: US09331227B2Publication Date: 2016-05-03
- Inventor: Daniel C. Law , Richard R. King , Dimitri Daniel Krut , Dhananjay Bhusari
- Applicant: The Boeing Company
- Applicant Address: US IL Chicago
- Assignee: THE BOEING COMPANY
- Current Assignee: THE BOEING COMPANY
- Current Assignee Address: US IL Chicago
- Agency: Thompson Hine LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L31/0725 ; H01L21/18 ; H01L31/18
Abstract:
A semiconductor device may include a first subassembly and a second subassembly. The first subassembly may include a first bonding layer. The second subassembly may include a second substrate and a second bonding layer directly bonded to the first bonding layer. The first bonding layer and the second bonding layer may be lattice-mismatched to one another. At least one of the following may be selected: the first bonding layer is lattice-mismatched to the first substrate, and the second bonding layer is lattice-mismatched to the second substrate.
Public/Granted literature
- US20150200321A1 DIRECTLY BONDED, LATTICE-MISMATCHED SEMICONDUCTOR DEVICE Public/Granted day:2015-07-16
Information query
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