Invention Grant
- Patent Title: Method for manufacturing a semiconductor micro- or nano-wire, semiconductor structure comprising such a micro- or nano-wire, and method for manufacturing a semiconductor structure
- Patent Title (中): 用于制造包含这种微纳米线的半导体微纳米线的半导体结构的方法以及用于制造半导体结构的方法
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Application No.: US14362479Application Date: 2012-12-19
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Publication No.: US09331233B2Publication Date: 2016-05-03
- Inventor: Amelie Dussaigne , Philippe Gilet , Francois Martin
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
- Applicant Address: FR Paris
- Assignee: Commissariat a l'energie atomique et aux energies alternatives
- Current Assignee: Commissariat a l'energie atomique et aux energies alternatives
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1162029 20111220
- International Application: PCT/EP2012/076091 WO 20121219
- International Announcement: WO2013/092665 WO 20130627
- Main IPC: H01L33/20
- IPC: H01L33/20 ; H01L33/00 ; H01L33/12 ; H01L33/18 ; H01L21/02 ; H01L31/0352 ; H01L31/0735 ; H01L31/18 ; H01L31/0304 ; H01L33/32 ; H01L33/08 ; H01L33/40
Abstract:
A method of manufacturing at least one semiconducting micro- or nano-wire used for formation of an optoelectric structure, optoelectronic structures including the micro- or nano-wires, and a method enabling manufacture of the photoelectronic structures. The method includes providing a semiconducting substrate, forming a crystalline buffer layer on the substrate, the buffer layer having a first zone over at least part of its thickness composed mainly of magnesium nitride in a form MgxNy, and forming at least one semiconducting micro- or nano-wire on the buffer layer.
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