In at least one embodiment, the semiconductor layer sequence (1) is provided for an optoelectronic semiconductor chip (10). The semiconductor layer sequence (1) contains at least three quantum wells (2) which are arranged to generate electromagnetic radiation. Furthermore, the semiconductor layer sequence (1) includes a plurality of barrier layers (3), of which at least one barrier layer is arranged between two adjacent quantum wells (2) in each case. The quantum wells (2) have a first average indium content and the barrier layers (3) have a second, smaller, average indium content. A second average lattice constant of the barrier layers (3) is thereby smaller than a first average lattice constant of the quantum wells (2).