Invention Grant
US09331264B1 Microelectromechanical resonators having degenerately-doped and/or eutectic alloy resonator bodies therein
有权
在其中具有简并掺杂和/或共晶合金谐振器体的微机电谐振器
- Patent Title: Microelectromechanical resonators having degenerately-doped and/or eutectic alloy resonator bodies therein
- Patent Title (中): 在其中具有简并掺杂和/或共晶合金谐振器体的微机电谐振器
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Application No.: US13712533Application Date: 2012-12-12
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Publication No.: US09331264B1Publication Date: 2016-05-03
- Inventor: Farrokh Ayazi , Ashwin Samarao
- Applicant: Georgia Tech Research Corporation
- Applicant Address: US GA Atlanta
- Assignee: Georgia Tech Research Corporation
- Current Assignee: Georgia Tech Research Corporation
- Current Assignee Address: US GA Atlanta
- Agency: Myers Bigel & Sibley, P.A.
- Main IPC: H01L21/22
- IPC: H01L21/22 ; H01L41/113 ; H01L29/84
Abstract:
A microelectromechanical resonator includes a resonator body having a semiconductor region therein that may be degenerately doped with boron. This high level of doping facilitates the formation of a eutectic alloy within the resonator body in response to resistive heating. The formation of a lattice-strained eutectic alloy within the resonator body supports reductions in the temperature coefficient of frequency (TCF) of the resonator over a relatively large temperature range.
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