Invention Grant
- Patent Title: Laser diode device
- Patent Title (中): 激光二极管装置
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Application No.: US14373998Application Date: 2013-03-11
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Publication No.: US09331453B2Publication Date: 2016-05-03
- Inventor: Uwe Strauβ , Sönke Tautz , Alfred Lell , Clemens Vierheilig
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE Regensburg
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: Slater Matsil, LLP
- Priority: DE102012103160 20120412
- International Application: PCT/EP2013/054890 WO 20130311
- International Announcement: WO2013/152909 WO 20131017
- Main IPC: H01S5/022
- IPC: H01S5/022 ; H01S5/323 ; H01S5/026 ; H01S5/024
Abstract:
A laser diode device has a housing with a mounting part and a laser diode chip, which is based on a nitride compound semi-conductor material, in the housing on the mounting part. The laser diode chip is mounted directly on the mounting part by means of a solder layer and the solder layer has a thickness of greater than or equal to 3 μm.
Public/Granted literature
- US20140341247A1 Laser Diode Device Public/Granted day:2014-11-20
Information query
