Invention Grant
- Patent Title: Semiconductor laser apparatus
- Patent Title (中): 半导体激光装置
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Application No.: US14441091Application Date: 2013-10-01
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Publication No.: US09331457B2Publication Date: 2016-05-03
- Inventor: Daiji Morita , Tomotaka Katsura , Susumu Konno , Shuichi Fujikawa , Satoshi Nishida , Kenji Kumamoto , Naoki Miyamoto , Hiroaki Kurokawa
- Applicant: MITSUBISHI ELECTRIC CORPORATION
- Applicant Address: JP Chiyoda-ku
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Chiyoda-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-263980 20121203
- International Application: PCT/JP2013/076681 WO 20131001
- International Announcement: WO2014/087726 WO 20140612
- Main IPC: H01S5/40
- IPC: H01S5/40 ; H01S5/14 ; G02B19/00 ; G02B27/10 ; G02B27/12 ; H01S5/022 ; G02B3/06 ; G02B27/14 ; G02B27/42

Abstract:
A semiconductor laser apparatus, including: a beam divergence angle correction optical system for correcting a divergence angle of beams generated from light emitting points of a semiconductor laser bar; a beam rotation optical system for rotating the beams each having the corrected divergence angle; a wavelength dispersion optical element having a wavelength dispersion function; and a partial reflection mirror. A relative position of the beam divergence angle correction optical system with respect to the light emitting point in a divergence angle correction direction is changed for each light emitting point.
Public/Granted literature
- US20150303656A1 SEMICONDUCTOR LASER APPARATUS Public/Granted day:2015-10-22
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