Invention Grant
- Patent Title: Low-voltage amplifier and method thereof
- Patent Title (中): 低压放大器及其方法
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Application No.: US14250404Application Date: 2014-04-11
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Publication No.: US09331647B2Publication Date: 2016-05-03
- Inventor: Chia-Liang (Leon) Lin
- Applicant: Realtek Semiconductor Corp.
- Applicant Address: TW Hsinchu
- Assignee: REALTEK SEMICONDUCTOR CORP.
- Current Assignee: REALTEK SEMICONDUCTOR CORP.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H03F3/45
- IPC: H03F3/45

Abstract:
An amplifier is provided having a first mixed-length MOS device set for receiving an input signal and outputting an output signal, and a first load for providing termination for the output signal, wherein the first mixed-length MOS device set comprises a parallel connection of a plurality of MOS devices having different channel lengths including at least a short channel length MOS device and a long channel length MOS device. In one configuration, a threshold voltage of the short channel length MOS device is greater than a threshold voltage of the long channel length MOS device. A related method is also provided.
Public/Granted literature
- US20150295538A1 LOW-VOLTAGE AMPLIFIER AND METHOD THEREOF Public/Granted day:2015-10-15
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