Invention Grant
US09331655B2 Pop-click noise grounding switch design with deep sub-micron CMOS technology
有权
使用深亚微米CMOS技术进行咔嗒声噪声接地开关设计
- Patent Title: Pop-click noise grounding switch design with deep sub-micron CMOS technology
- Patent Title (中): 使用深亚微米CMOS技术进行咔嗒声噪声接地开关设计
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Application No.: US14020696Application Date: 2013-09-06
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Publication No.: US09331655B2Publication Date: 2016-05-03
- Inventor: Yang Xu , Dale George Frederick Stubbs , Khaled Mahmoud Abdelfattah Aly
- Applicant: BROADCOM CORPORATION
- Applicant Address: US CA Irvine
- Assignee: Broadcom Corporation
- Current Assignee: Broadcom Corporation
- Current Assignee Address: US CA Irvine
- Agency: McDermott Will & Emery LLP
- Main IPC: H03G3/34
- IPC: H03G3/34 ; H03F1/30

Abstract:
A device for grounding pop-click noise may include an output block configured to generate an output signal at an output node. A switch circuit coupled to the output node may be configured to be operable to couple the output node to a ground potential. The switch circuit may include a first and a second transistor. A drain, a source, and a gate node of the first transistor may be coupled to the output node, a drain node of the second transistor, and a first control signal, respectively. A drain, a source, and a gate node of the second transistor may be coupled to a source node of the first transistor, the ground potential, and a second control signal, respectively. The first and the second control signals may operate the switch circuit to couple the output node to the ground potential during a pre-determined period associated with the pop-click noise.
Public/Granted literature
- US20150016630A1 POP-CLICK NOISE GROUNDING SWITCH DESIGN WITH DEEP SUB-MICRON CMOS TECHNOLOGY Public/Granted day:2015-01-15
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