Invention Grant
- Patent Title: Power-up circuit of semiconductor apparatus
- Patent Title (中): 半导体装置的上电电路
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Application No.: US14444396Application Date: 2014-07-28
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Publication No.: US09331687B2Publication Date: 2016-05-03
- Inventor: Sang Jin Byeon
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si, Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si, Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2014-0055261 20140509
- Main IPC: H03K17/22
- IPC: H03K17/22 ; H03K19/0185
Abstract:
A power-up circuit of a semiconductor apparatus using a plurality of external power voltages is configured to determine a stableness of the plurality of external power voltages through relative comparison of the plurality of external power voltages, and to activate a power-up signal.
Public/Granted literature
- US20150326218A1 POWER-UP CIRCUIT OF SEMICONDUCTOR APPARATUS Public/Granted day:2015-11-12
Information query
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