Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14638205Application Date: 2015-03-04
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Publication No.: US09331695B2Publication Date: 2016-05-03
- Inventor: Chihiro Yoshimura , Masanao Yamaoka , Masato Hayashi
- Applicant: HITACHI, LTD.
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Priority: JP2014-176127 20140829
- Main IPC: H03K19/00
- IPC: H03K19/00

Abstract:
An object of the present invention is to realize an example of configuration that approximately represents a state of quantum spin in a semiconductor device where components as a basic configuration unit are arrayed so as to search a ground state of Ising model. There is disclosed a semiconductor device provided with plural units each of which is equipped with a first memory cell that stores a value which represents one spin of the Ising model by three or more states, a second memory cell that stores an interaction coefficient showing interaction from another spin which exerts interaction on the one spin and a logical circuit that determines the next state of the one spin on the basis of a function having a value which represents a state of the other spin and the interaction coefficient as a constant or a variable.
Public/Granted literature
- US20160065210A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-03-03
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