Invention Grant
- Patent Title: Metal-insulator phase transition flip-flop
- Patent Title (中): 金属绝缘体相变触发器
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Application No.: US14345594Application Date: 2011-10-28
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Publication No.: US09331700B2Publication Date: 2016-05-03
- Inventor: Gilberto M. Ribeiro , Matthew D. Pickett
- Applicant: Gilberto M. Ribeiro , Matthew D. Pickett
- Applicant Address: US TX Houston
- Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee Address: US TX Houston
- Agency: North Shore Associates
- International Application: PCT/US2011/058461 WO 20111028
- International Announcement: WO2013/062595 WO 20130502
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/41 ; H01L47/00 ; H01L27/24 ; H01L27/26 ; H03K19/177 ; G11C19/28 ; H03K3/357 ; H01L45/00 ; H03K3/037 ; H03K19/003 ; G11C13/00

Abstract:
A metal-insulator phase transition (MIT) flip-flop employs a selected one of a pair of bi-stable operating states to represent a logic state of the MIT flip-flop. The MIT flip-flop includes an MIT device having a current-controlled negative differential resistance (CC-NDR) to provide the pair of bi-stable operating states. A bi-stable operating state of the pair is capable of being selected by a programing voltage. Once the bi-stable operating state is selected, the bi-stable operating state is capable of being maintained by a bias voltage applied to the MIT device.
Public/Granted literature
- US20140313818A1 METAL-INSULATOR PHASE TRANSITION FLIP-FLOP Public/Granted day:2014-10-23
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