Invention Grant
- Patent Title: EUV light source and exposure apparatus
- Patent Title (中): EUV光源和曝光装置
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Application No.: US14885375Application Date: 2015-10-16
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Publication No.: US09332626B1Publication Date: 2016-05-03
- Inventor: Qiang Wu , Liwan Yue
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
- Applicant Address: CN Shanghai
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee Address: CN Shanghai
- Agency: Anova Law Group, PLLC
- Priority: CN201410549348 20141016
- Main IPC: G02B17/00
- IPC: G02B17/00 ; H01S3/08 ; H05G2/00 ; H01S3/223 ; G03F7/20

Abstract:
An extreme ultraviolet (EUV) light source is provided. The EUV light source comprises a spray nozzle array having a plurality of spray nozzles configured to spray a plurality of rows of droplets to an irradiating position. The EUV light source also includes a laser source having a first reflective mirror and a second reflective mirror configured to generate a first laser beam and a second laser beam, and to cause the first laser beam and the second laser beam to sequentially bombard the plurality of droplets arriving at the irritating position to generate EUV light with increased output power. Further, the EUV light source includes a light focusing device a light focusing device comprising a first partial focusing mirror and a second partial focusing mirror configured to perform a rotating scanning to collect EUV light and focus the collected EUV light at a central focusing point.
Public/Granted literature
- US20160113101A1 EUV LIGHT SOURCE AND EXPOSURE APPARATUS Public/Granted day:2016-04-21
Information query
IPC分类:
G | 物理 |
G02 | 光学 |
G02B | 光学元件、系统或仪器 |
G02B17/00 | 有或无折射元件的具有反射面的系统 |