A thin-film optoelectric device is disclosed comprising a functional layer structure (30) enclosed between a first barrier layer structure (20) and a second barrier layer structure (40), the device having an open, electrically interconnected conductive structure (10) that is embedded within the first barrier layer structure (20), that comprises at least one elongated element (12a, 12b, 12c) of a metal that laterally extends within the barrier layer structure (20), and that is arranged against the functional layer structure (30), the electrically interconnected conductive structure (10) having a laterally facing, processed surface embedded in the first barrier layer (20).