Invention Grant
- Patent Title: Nanostructure production methods and apparatus
- Patent Title (中): 纳米结构生产方法和装置
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Application No.: US11920280Application Date: 2006-05-11
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Publication No.: US09334167B2Publication Date: 2016-05-10
- Inventor: Sembukutiarachilage Ravi Silva , Ben Poul Jensen , Guan Yow Chen
- Applicant: Sembukutiarachilage Ravi Silva , Ben Poul Jensen , Guan Yow Chen
- Applicant Address: GB East Sussex
- Assignee: SURREY NANOSYSTEMS LIMITED
- Current Assignee: SURREY NANOSYSTEMS LIMITED
- Current Assignee Address: GB East Sussex
- Agency: Thomas | Horstemeyer, LLP
- Priority: GB0509499.0 20050511
- International Application: PCT/GB2006/001726 WO 20060511
- International Announcement: WO2006/120449 WO 20061116
- Main IPC: C23C16/46
- IPC: C23C16/46 ; C01B31/02 ; B82Y30/00 ; B82Y40/00
Abstract:
The present invention relates to a method of forming nanostructures or nanomaterials. The method comprises providing a thermal control barrier on a substrate and forming the nanostructures or nanomaterials. The method may, for example, be used to form carbon nanotubes by plasma enhanced chemical vapor deposition using a carbon containing gas plasma: The temperature of the substrate may be maintained at less than 350° C. while the carbon nanotubes are formed.
Public/Granted literature
- US20090061217A1 Nanostructure production methods and apparatus Public/Granted day:2009-03-05
Information query
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