Invention Grant
US09334559B2 Powder, sintered body and sputtering target, each containing elements of Cu, In, Ga and Se, and method for producing the powder
有权
粉末，烧结体和溅射靶，各自含有Cu，In，Ga和Se的元素，以及粉末的制造方法
- Patent Title: Powder, sintered body and sputtering target, each containing elements of Cu, In, Ga and Se, and method for producing the powder
- Patent Title (中): 粉末，烧结体和溅射靶，各自含有Cu，In，Ga和Se的元素，以及粉末的制造方法
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Application No.: US13807538Application Date: 2011-06-27
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Publication No.: US09334559B2Publication Date: 2016-05-10
- Inventor: Masaya Ehira , Akira Nambu , Shigeo Kashiwai , Masafumi Fukuzumi
- Applicant: Masaya Ehira , Akira Nambu , Shigeo Kashiwai , Masafumi Fukuzumi
- Applicant Address: JP Kobe-shi JP Kobe-shi
- Assignee: KOBELCO RESEARCH INSTITUTE, INC.,HYOGO PREFECTURE
- Current Assignee: KOBELCO RESEARCH INSTITUTE, INC.,HYOGO PREFECTURE
- Current Assignee Address: JP Kobe-shi JP Kobe-shi
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P
- Priority: JP2010-147618 20100629
- International Application: PCT/JP2011/064713 WO 20110627
- International Announcement: WO2012/002337 WO 20120105
- Main IPC: C01B19/00
- IPC: C01B19/00 ; B22F9/08 ; C23C14/14 ; C04B35/547 ; C04B35/626 ; C04B35/645 ; C22C1/04 ; C22C9/00 ; C22C28/00 ; C23C14/06 ; C23C14/34 ; C22C30/00 ; C22C30/02
Abstract:
The present invention provides a Cu—In—Ga—Se powder containing Cu, In, Ga and Se in which cracks do not occur during sintering or processing, and a sintered body and sputtering target, each using the same. The present invention relates to a powder containing Cu, In Ga and Se, which contains a Cu—In—Ga—Se compound and/or a Cu—In—Se compound in an amount of 60 mass % or more in total. The powder of the present invention preferably contains an In—Se compound in an amount of 20 mass % or less and/or a Cu—In compound in an amount of 20 mass % or less.
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