Invention Grant
US09335276B2 Monitoring method and apparatus for control of excimer laser annealing
有权
准分子激光退火控制的监测方法和装置
- Patent Title: Monitoring method and apparatus for control of excimer laser annealing
- Patent Title (中): 准分子激光退火控制的监测方法和装置
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Application No.: US14195656Application Date: 2014-03-03
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Publication No.: US09335276B2Publication Date: 2016-05-10
- Inventor: Paul Van Der Wilt
- Applicant: Coherent LaserSystems GmbH & Co. KG
- Applicant Address: DE Göttingen
- Assignee: Coherent LaserSystems GmbH & Co. KG
- Current Assignee: Coherent LaserSystems GmbH & Co. KG
- Current Assignee Address: DE Göttingen
- Agency: Morrison & Foerster LLP
- Main IPC: H01L21/268
- IPC: H01L21/268 ; G01N21/95 ; H01L21/66 ; G01N21/84 ; G01N21/88 ; G02B21/00 ; G01N21/47 ; H01L21/02

Abstract:
A method is disclosed evaluating a silicon layer crystallized by irradiation with pulses form an excimer-laser. The crystallization produces periodic features on the crystallized layer dependent on the number of and energy density ED in the pulses to which the layer has been exposed. An area of the layer is illuminated with light. A microscope image of the illuminated area is made from light diffracted from the illuminated are by the periodic features. The microscope image includes corresponding periodic features. The ED is determined from a measure of the contrast of the periodic features in the microscope image.
Public/Granted literature
- US20150247808A1 MONITORING METHOD AND APPARATUS FOR CONTROL OF EXCIMER LASER ANNEALING Public/Granted day:2015-09-03
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