Invention Grant
- Patent Title: Implementing low temperature wafer test
- Patent Title (中): 实施低温晶圆试验
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Application No.: US14010657Application Date: 2013-08-27
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Publication No.: US09335367B2Publication Date: 2016-05-10
- Inventor: Travis R. Hebig , Joseph Kuczynski , Steven R. Nickel
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Joan Pennington
- Main IPC: G01R31/28
- IPC: G01R31/28

Abstract:
A method and structure are provided for implementing low temperature wafer testing of a completed wafer. A coolant gel is applied to the completed wafer, the gel coated wafer is cooled and one or more electrical test probes are applied through the gel to electrical contacts of the cooled wafer, and testing is performed.
Public/Granted literature
- US20150061712A1 IMPLEMENTING LOW TEMPERATURE WAFER TEST Public/Granted day:2015-03-05
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