Invention Grant
- Patent Title: Inter-processor memory
- Patent Title (中): 处理器间内存
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Application No.: US14318874Application Date: 2014-06-30
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Publication No.: US09335947B2Publication Date: 2016-05-10
- Inventor: Pen C. Chien , Frank N. Cheung , Kuan Y. Huang
- Applicant: Raytheon Company
- Applicant Address: US MA Waltham
- Assignee: RAYTHEON COMPANY
- Current Assignee: RAYTHEON COMPANY
- Current Assignee Address: US MA Waltham
- Agency: Cantor Colburn LLP
- Main IPC: G06F13/00
- IPC: G06F13/00 ; G06F3/06

Abstract:
Embodiments relate to an inter-processor memory. An aspect includes a plurality of memory banks, each of the plurality of memory banks comprising a respective plurality of parallel memory modules, wherein a number of the plurality of memory banks is equal to a number of read ports of the inter-processor memory, and a number of parallel memory modules within a memory bank is equal to a number of write ports of the inter-processor memory. Another aspect includes each memory bank corresponding to a single respective read port of the inter-processor memory, and wherein, within each memory bank, each memory module of the plurality of parallel memory modules is writable in parallel by a single respective write port of the inter-processor memory.
Public/Granted literature
- US20150378639A1 INTER-PROCESSOR MEMORY Public/Granted day:2015-12-31
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