Invention Grant
- Patent Title: Nonvolatile memory internal signature generation
- Patent Title (中): 非易失性存储器内部签名生成
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Application No.: US12638953Application Date: 2009-12-15
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Publication No.: US09336410B2Publication Date: 2016-05-10
- Inventor: John C Rudelic
- Applicant: John C Rudelic
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G06F21/64
- IPC: G06F21/64 ; G06F21/56 ; G06F21/79
Abstract:
A nonvolatile memory device generates a signature using a private key and contents within the memory device. The signature is stored in a secure area within the nonvolatile memory device. A processor having the same private key also generates a signature that is stored in the clear. The processor validates the contents of the nonvolatile memory by comparing the signatures.
Public/Granted literature
- US20110145600A1 NONVOLATILE MEMORY INTERNAL SIGNATURE GENERATION Public/Granted day:2011-06-16
Information query
