Invention Grant
- Patent Title: Memory array
- Patent Title (中): 内存阵列
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Application No.: US14793783Application Date: 2015-07-08
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Publication No.: US09336859B2Publication Date: 2016-05-10
- Inventor: Tzu-Kuei Lin , Hung-Jen Liao , Jhon Jhy Liaw , Yen-Huei Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Hauptman Ham, LLP
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/41 ; G11C11/412

Abstract:
A memory array includes a first memory cell and a second memory cell aligned along a column direction. Each of the first memory cell and the second memory cell includes a pair of cross-coupled inverters, a first switch on a first side, along the column direction, of the pair of cross-coupled inverters, a second switch aligned with the first switch along the column direction, on a second side of the pair of cross-coupled inverters opposing to the first side, a third switch on the first side of the pair of cross-coupled inverters, and a fourth switch aligned with the third switch along the column direction, on the second side of the pair of cross-coupled inverters. The memory array also includes a first data line, a first complementary data line, a second data line and a second complementary data line.
Public/Granted literature
- US20150310908A1 MEMORY ARRAY Public/Granted day:2015-10-29
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