Invention Grant
- Patent Title: Mixed mode programming for phase change memory
- Patent Title (中): 相变存储器的混合模式编程
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Application No.: US14486883Application Date: 2014-09-15
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Publication No.: US09336874B2Publication Date: 2016-05-10
- Inventor: Ferdinando Bedeschi
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00
Abstract:
Subject matter disclosed herein relates to a memory device, and more particularly to write performance of a phase change memory.
Public/Granted literature
- US20150003149A1 MIXED MODE PROGRAMMING FOR PHASE CHANGE MEMORY Public/Granted day:2015-01-01
Information query
