Invention Grant
US09336890B1 Simultaneous programming of many bits in flash memory 有权
闪存中许多位的同时编程

Simultaneous programming of many bits in flash memory
Abstract:
A semiconductor device includes: a plurality of memory cells; a plurality of local bit lines connected to respective memory cells of the plurality of memory cells; and a first amplifier. The first amplifier receives read data from each local bit line of the plurality of local bit lines and determines a transition speed of an output level of the first amplifier in response to receiving a combination of at least two pieces of read data. The first amplifier transfers, based on the determined transition speed, multivalued data of the read data to a read global bit line.
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