Invention Grant
- Patent Title: Simultaneous programming of many bits in flash memory
- Patent Title (中): 闪存中许多位的同时编程
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Application No.: US14517201Application Date: 2014-10-17
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Publication No.: US09336890B1Publication Date: 2016-05-10
- Inventor: Kaoru Mori
- Applicant: Spansion LLC
- Applicant Address: US CA San Jose
- Assignee: Cypress Semiconductor Corporation
- Current Assignee: Cypress Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Main IPC: G11C16/26
- IPC: G11C16/26 ; G11C16/24 ; G11C7/10 ; G11C7/06

Abstract:
A semiconductor device includes: a plurality of memory cells; a plurality of local bit lines connected to respective memory cells of the plurality of memory cells; and a first amplifier. The first amplifier receives read data from each local bit line of the plurality of local bit lines and determines a transition speed of an output level of the first amplifier in response to receiving a combination of at least two pieces of read data. The first amplifier transfers, based on the determined transition speed, multivalued data of the read data to a read global bit line.
Public/Granted literature
- US20160111166A1 Simultaneous Programming of Many Bits in Flash Memory Public/Granted day:2016-04-21
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