Invention Grant
- Patent Title: Ion implantation device
- Patent Title (中): 离子注入装置
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Application No.: US14420377Application Date: 2013-09-12
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Publication No.: US09336991B2Publication Date: 2016-05-10
- Inventor: Satoshi Naganawa , Daisuke Goto , Suguru Kenmochi
- Applicant: LINTEC Corporation
- Applicant Address: JP Tokyo
- Assignee: LINTEC Corporation
- Current Assignee: LINTEC Corporation
- Current Assignee Address: JP Tokyo
- Agency: Young & Thompson
- Priority: JP2012-204942 20120918
- International Application: PCT/JP2013/074675 WO 20130912
- International Announcement: WO2014/046003 WO 20140327
- Main IPC: H01J37/30
- IPC: H01J37/30 ; H01J37/317 ; C23C14/48 ; H05H1/46 ; H01J37/32 ; C23C14/56 ; H05H1/48

Abstract:
The disclosed ion implantation apparatus has a vacuum chamber 11, a roller electrode 13 having a portion of an outer circumferential part on which a film 3 is wound, voltage application unit 23 for applying a voltage to the roller electrode, and a gas introduction unit having a gas supply outlet for supplying an ion implantation gas into the vacuum chamber, wherein the gas introduction unit and a gas discharge outlet are disposed so as to be opposite each other along the axial direction of the roller electrode, the roller electrode intervening therebetween.
Public/Granted literature
- US20150206710A1 ION IMPLANTATION DEVICE Public/Granted day:2015-07-23
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