Invention Grant
- Patent Title: Method of manufacturing a semiconductor device, method of processing a substrate, substrate processing apparatus, and recording medium
- Patent Title (中): 半导体器件的制造方法，衬底的处理方法，衬底处理设备和记录介质
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Application No.: US13853058Application Date: 2013-03-29
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Publication No.: US09337015B2Publication Date: 2016-05-10
- Inventor: Tsuyoshi Takeda , Taketoshi Sato , Minoru Kohashi
- Applicant: HITACHI KOKUSAI ELECTRIC INC.
- Applicant Address: JP Tokyo
- Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee Address: JP Tokyo
- Agency: Solaris Intellectual Property Group, PLLC
- Priority: JP2012-096929 20120420; JP2013-054706 20130318
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/02 ; C23C16/26 ; C23C16/44 ; C23C16/455
Abstract:
Disclosed is a method of manufacturing a semiconductor device. The method includes forming a film containing carbon on a substrate by repeating a cycle plural times. The cycle includes: in a state in which a substrate housed in a processing chamber is heated, supplying an organic-based gas into the processing chamber and confining the organic-based gas inside the processing chamber; maintaining a state in which the organic-based gas is confined inside the processing chamber; and exhausting an inside of the processing chamber.
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