Invention Grant
- Patent Title: Resist mask processing method using hydrogen containing plasma
- Patent Title (中): 使用含氢等离子体的抗蚀剂掩模处理方法
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Application No.: US14403794Application Date: 2013-06-17
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Publication No.: US09337020B2Publication Date: 2016-05-10
- Inventor: Michihisa Takachi , Yusuke Shimizu , Toshihisa Ozu
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2012-141961 20120625
- International Application: PCT/JP2013/066561 WO 20130617
- International Announcement: WO2014/002808 WO 20140103
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01J37/32 ; H01L21/027 ; H01L21/033 ; H01L21/3213 ; H01L21/306 ; H01L21/311
Abstract:
A method for processing a resist mask includes: (a) a step of preparing, in a processing chamber, a target object to be processed having a patterned resist mask provided thereon; and (b) a step of generating a plasma of the hydrogen-containing gas by supplying a hydrogen-containing gas and supplying a microwave into the processing chamber. The hydrogen-containing gas may be, e.g., H2 gas.
Public/Granted literature
- US20150104957A1 RESIST MASK PROCESSING METHOD Public/Granted day:2015-04-16
Information query
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