Invention Grant
- Patent Title: Methods and structures for preparing single crystal silicon wafers for use as substrates for epitaxial growth of crack-free gallium nitride FILMS and devices
- Patent Title (中): 制备单晶硅晶片的方法和结构，用作无裂纹氮化镓FILMS和器件外延生长的基片
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Application No.: US14251634Application Date: 2014-04-13
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Publication No.: US09337024B2Publication Date: 2016-05-10
- Inventor: Ananda H. Kumar
- Applicant: Ananda H. Kumar
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/46 ; H01L21/02 ; H01L29/04 ; H01L29/20 ; H01L33/00
Abstract:
This document describes the fabrication and use of ceramic stabilizing layer fabricated right on the product silicon wafer to facilitate its use as a substrate for fabrication of gallium nitride films. A ceramic layer is formed and then attached to a single crystal silicon substrate to form a composite silicon substrate that has coefficient of thermal expansion comparable with GaN. The composite silicon substrates prepared by this invention are uniquely suited for use as growth substrates for crack-free gallium nitride films, benefiting from compressive stresses produced by choosing a ceramic having a desired higher coefficient thermal expansion than those of silicon and gallium nitride.
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