Invention Grant
- Patent Title: Method for producing a MOS stack on a diamond substrate
- Patent Title (中): 用于在金刚石基底上制造MOS堆叠的方法
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Application No.: US14367146Application Date: 2012-12-20
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Publication No.: US09337034B2Publication Date: 2016-05-10
- Inventor: Gauthier Chicot , Aurélien Marechal , Pierre Muret , Julien Pernot
- Applicant: Centre National de la Recherche Scientifique , Universite Joseph Fourier
- Applicant Address: FR FR
- Assignee: Centre National de la Recherche Scientifique,Universite Joseph Fourier
- Current Assignee: Centre National de la Recherche Scientifique,Universite Joseph Fourier
- Current Assignee Address: FR FR
- Agency: Kaplan Breyer Schwarz & Ottesen, LLP
- Priority: FR1162052 20111220
- International Application: PCT/FR2012/053026 WO 20121220
- International Announcement: WO2013/093360 WO 20130627
- Main IPC: H01L21/04
- IPC: H01L21/04 ; H01L21/02 ; H01L29/51 ; H01L29/16 ; H01L29/66 ; H01L29/78 ; H01L29/49
Abstract:
The invention relates to a method for producing a component comprising a conductive grid insulated from a semiconductor monocrystalline diamond substrate by an insulating region, comprising the following steps: a) oxygenating the surface of the substrate so as to replace the hydrogen surface terminations of the substrate with oxygen surface terminations; and b) forming the insulating region on the surface of the substrate by repeated monatomic layer deposition.
Public/Granted literature
- US20150014707A1 METHOD FOR PRODUCING A MOS STACK ON A DIAMOND SUBSTRATE Public/Granted day:2015-01-15
Information query
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