Invention Grant
- Patent Title: Method for electrical activation of dopant species in a GaN film
- Patent Title (中): GaN膜中掺杂物质的电活化方法
-
Application No.: US14314333Application Date: 2014-06-25
-
Publication No.: US09337039B2Publication Date: 2016-05-10
- Inventor: Claire Agraffeil
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Applicant Address: FR Paris
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee Address: FR Paris
- Agency: Oliff PLC
- Priority: FR1356481 20130703
- Main IPC: H01L21/225
- IPC: H01L21/225 ; H01L21/324 ; H01L21/265 ; H01L33/00
Abstract:
The method includes the steps of a) Providing a stack having a support substrate and a film of GaN having dopant species, b) Directly bonding a shielding layer having a thickness higher than 2 micrometers to the surface of the film of GaN, so as to form an activation structure, and c) Applying a thermal budget to the activation structure according to conditions allowing to electrically activate at least one portion of the dopant species.
Public/Granted literature
- US20150011080A1 METHOD FOR ELECTRICAL ACTIVATION OF DOPANT SPECIES IN A GaN FILM Public/Granted day:2015-01-08
Information query
IPC分类:
