Invention Grant
- Patent Title: Semiconductor device manufacturing method
- Patent Title (中): 半导体器件制造方法
-
Application No.: US14623006Application Date: 2015-02-16
-
Publication No.: US09337056B2Publication Date: 2016-05-10
- Inventor: Rui Takahashi , Ryuuu Ishita , Kazuki Narishige
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2014-027498 20140217
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01L21/3213 ; H01L21/311 ; H01L21/02 ; H01L21/306 ; H01J37/32 ; H01L27/115
Abstract:
A semiconductor device manufacturing method for etching a multilayer film using a mask is provided. The method includes (a) supplying a first gas containing hydrogen, hydrogen bromide, nitrogen trifluoride and at least one of hydrocarbon, fluorocarbon and fluorohydrocarbon into the processing chamber and exciting the first gas to etch the multilayer film from a top surface of the multilayer film to a predetermined position in a stacked direction of the multilayer film; and (b) supplying a second gas that does not substantially contain hydrogen bromide and contains hydrogen and nitrogen trifluoride and at least one of Thydrocarbon, fluorocarbon and fluorohydrocarbon into the processing chamber and exciting the second gas to etch the multilayer film from the predetermined position of the multilayer film to a top surface of the etching stop layer.
Public/Granted literature
- US20150235862A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2015-08-20
Information query
IPC分类:
