Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US14437507Application Date: 2012-11-20
-
Publication No.: US09337113B2Publication Date: 2016-05-10
- Inventor: Rintaro Asai , Atsushi Tanida
- Applicant: Rintaro Asai , Atsushi Tanida
- Applicant Address: JP Toyota
- Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
- Current Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
- Current Assignee Address: JP Toyota
- Agency: Oliff PLC
- International Application: PCT/JP2012/080031 WO 20121120
- International Announcement: WO2014/080449 WO 20140530
- Main IPC: H01L23/02
- IPC: H01L23/02 ; H01L23/52 ; H01L21/48 ; H01L23/10 ; H01L23/00 ; H01L23/051 ; H01L23/433 ; H01L23/495 ; H01L23/48 ; H01L21/52 ; H01L23/31
Abstract:
A semiconductor device includes a transistor, lead frames, a metal spacer, one surface of which is bonded to the transistor by a first bonding material and the other surface of which is bonded to the lead frame by a second bonding material, and a plastic mold. The plastic mold packages the transistor and the metal spacer. One surface of each of the lead frames is attached to the plastic mold. Strength of the second bonding material is lower than strength of the first bonding material. According to the above configuration, when stress is repeatedly applied to the semiconductor device, a crack occurs earlier in the second bonding material than in the first bonding material. The stress is buffered at the first bonding material.
Public/Granted literature
- US20150294920A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-10-15
Information query
IPC分类:
