Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14324724Application Date: 2014-07-07
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Publication No.: US09337121B2Publication Date: 2016-05-10
- Inventor: Chi Hoon Jun , Sang Choon Ko , Seok-Hwan Moon , Woojin Chang , Sung-Bum Bae , Young Rak Park , Je Ho Na , Jae Kyoung Mun , Eun Soo Nam
- Applicant: Electronics and Telecommunications Research Institute
- Applicant Address: KR Daejeon
- Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee Address: KR Daejeon
- Agency: Rabin & Berdo, P.C.
- Priority: KR10-2014-0002913 20140109
- Main IPC: H01L23/367
- IPC: H01L23/367 ; H01L21/308 ; H01L23/473 ; H01L23/467 ; H01L21/3065 ; H01L21/3205
Abstract:
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes: an active region provided on a substrate; an inlet channel formed as a single cavity buried in one side of the substrate; an outlet channel formed as a single cavity buried in the other side of the substrate; a micro channel array comprising a plurality of micro channels, wherein the plurality of micro channels are formed as a plurality of cavities buried in the substrate, and one end of the micro channel array is connected to a side of the inlet channel and the other end of the micro channel array is connected to a side of the outlet channel; and a micro heat sink array separating the micro channels from one another.
Public/Granted literature
- US20150194363A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2015-07-09
Information query
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