Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14226280Application Date: 2014-03-26
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Publication No.: US09337129B2Publication Date: 2016-05-10
- Inventor: Koji Yasunaga , Shingo Takaki
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JP2013-065628 20130327
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/495 ; H01L23/00 ; H01L23/31 ; H01L21/56
Abstract:
A semiconductor device includes: a semiconductor element having an electrode facing a first direction; a first lead having a conductive distal end surface facing the electrode, and a rising portion which is connected to the distal end surface to extend away from the electrode; a conductive bonding material bonding the electrode of the semiconductor element to the distal end surface of the first lead; and a sealing resin covering the semiconductor element, at least a portion of the first lead, and the conductive bonding material.
Public/Granted literature
- US20140291828A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2014-10-02
Information query
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