Invention Grant
- Patent Title: Passivation scheme
- Patent Title (中): 钝化方案
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Application No.: US14276702Application Date: 2014-05-13
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Publication No.: US09337133B2Publication Date: 2016-05-10
- Inventor: Hsien-Wei Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L23/498 ; H01L23/532 ; H01L21/768 ; H01L21/3105

Abstract:
An integrated circuit includes a conductive pad disposed over a substrate. A first passivation layer is disposed over the conductive pad. A second passivation layer is disposed over the first passivation layer. A stress buffer layer is disposed over the second passivation layer. A conductive interconnect layer is over and coupled to the conductive pad and over the stress buffer layer with the conductive interconnect layer adjoining sidewalls of the first passivation layer and the stress buffer layer.
Public/Granted literature
- US20140246772A1 Passivation Scheme Public/Granted day:2014-09-04
Information query
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