Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14278300Application Date: 2014-05-15
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Publication No.: US09337134B2Publication Date: 2016-05-10
- Inventor: Kenji Oyachi , Tamaki Wada , Yuichi Morinaga
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Sughrue Mion, PLLC
- Priority: JP2013-115580 20130531
- Main IPC: H01L23/498
- IPC: H01L23/498 ; G06K19/077 ; H01L23/31 ; H01L23/00

Abstract:
Reliability of a semiconductor device is improved. A semiconductor device has a base material comprised of insulating material having a through hole, a terminal formed on a lower surface of the base material, and a semiconductor chip mounted on an upper surface of the base material in a face-up manner. Further, the semiconductor device has a conductive member such as a wire, which electrically connects a pad of the semiconductor chip with an exposed surface of the terminal which is exposed from the through hole of the base material, and has a sealing body for sealing the conductive member, inside of the through hole of the base material, and the semiconductor chip. An anchor means is provided in a region of the exposed surface of the terminal which is exposed from the through hole of the base material except for a joint portion joined with the conductive member such as the wire.
Public/Granted literature
- US20140353822A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-12-04
Information query
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