Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US14753873Application Date: 2015-06-29
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Publication No.: US09337142B2Publication Date: 2016-05-10
- Inventor: Toshihiko Miyazaki
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Foley & Lardner LLP
- Priority: JP2012-246458 20121108
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/522 ; H01L23/532 ; H01L23/528 ; H01L27/115 ; H01L49/02 ; H01L21/768

Abstract:
Provided are a semiconductor device including an oscillator and a manufacturing method thereof, in which cost is low and design flexibility is high. The semiconductor device includes a wiring structure region and an oscillator region. The semiconductor device also includes, in the oscillator region, a metal resistive element as the same layer as a conducting film over uppermost metal wiring in the wiring structure region.
Public/Granted literature
- US20150303143A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2015-10-22
Information query
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