Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14471320Application Date: 2014-08-28
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Publication No.: US09337154B2Publication Date: 2016-05-10
- Inventor: Chia-Chun Miao , Yen-Ping Wang , Hao-Yi Tsai , Shih-Wei Liang , Tsung-Yuan Yu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/00 ; H01L29/06 ; H01L21/78

Abstract:
A semiconductor device includes a substrate comprising a front surface, side surfaces, a back surface, and a recessed edge between the side surfaces and either the front surface or the back surface, the front surface comprising an active region, the active region comprising at least one contact pad, a polymeric member disposed and contacted with the recessed edge of the substrate, a mold disposed over the front surface of the substrate and the polymeric member, and an interface between the mold and the polymeric member.
Public/Granted literature
- US20160064338A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2016-03-03
Information query
IPC分类: