Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14679385Application Date: 2015-04-06
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Publication No.: US09337187B2Publication Date: 2016-05-10
- Inventor: Kishou Kaneko , Naoya Inoue , Yoshihiro Hayashi
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kanagawa
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2011-213918 20110929
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L21/822

Abstract:
A semiconductor device includes a logic circuit and an active element circuit. The logic circuit is provided with semiconductor elements formed in a semiconductor substrate. The active element circuit is provided with transistors formed using semiconductor layers formed over a diffusion insulating film formed above a semiconductor substrate. The active element circuit is controlled by the logic circuit.
Public/Granted literature
- US20150214218A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-07-30
Information query
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