Invention Grant
US09337197B1 Semiconductor structure having FinFET ultra thin body and methods of fabrication thereof
有权
具有FinFET超薄体的半导体结构及其制造方法
- Patent Title: Semiconductor structure having FinFET ultra thin body and methods of fabrication thereof
- Patent Title (中): 具有FinFET超薄体的半导体结构及其制造方法
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Application No.: US14525763Application Date: 2014-10-28
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Publication No.: US09337197B1Publication Date: 2016-05-10
- Inventor: Hui Zang , Bingwu Liu
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Heslin Rothenberg Farley and Mesiti PC
- Agent Nicholas Mesiti
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36 ; H01L21/40 ; H01L27/092 ; H01L29/161 ; H01L29/16 ; H01L21/8238 ; H01L21/02 ; H01L29/66
Abstract:
In one aspect there is set forth herein a semiconductor structure having fins extending upwardly from an ultrathin body (UTB). In one embodiment a multilayer structure can be disposed on a wafer and can be used to pattern voids extending from a UTB layer of the wafer. Selected material can be formed in the voids to define fins extending upward from the UTB layer. In one embodiment silicon (Si) can be grown within the voids to define the fins. In one embodiment, germanium based material can be grown within the voids to define the fins.
Public/Granted literature
- US20160118386A1 SEMICONDUCTOR STRUCTURE HAVING FINFET ULTRA THIN BODY AND METHODS OF FABRICATION THEREOF Public/Granted day:2016-04-28
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