Invention Grant
- Patent Title: Semiconductor device, related manufacturing method, and related electronic device
- Patent Title (中): 半导体器件，相关制造方法及相关电子器件
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Application No.: US14754287Application Date: 2015-06-29
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Publication No.: US09337206B2Publication Date: 2016-05-10
- Inventor: Guanhua Li , Haewan Yang
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
- Applicant Address: CN
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee Address: CN
- Agency: Innovation Counsel LLP
- Priority: CN201410389664 20140808
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L21/336 ; H01L21/3205 ; H01L21/4763 ; H01L27/115 ; H01L21/28 ; H01L21/3213 ; H01L21/311
Abstract:
A method for manufacturing a semiconductor device may include the following steps: providing a composite structure that includes a gate material layer, a first mask material layer, and a sacrificial layer; partially removing, through a first mask, the sacrificial layer to form a sacrificial members; providing a second mask material layer on the sacrificial members; partially removing the second mask material layer to form mask units that contact sides of the sacrificial members; removing the sacrificial members; providing a third mask material layer between two of the mask units for forming a second mask; partially removing, through the second mask, the first mask material layer to form a third mask; and partially removing, through the third mask, the gate material layer to form a control gate and a select gate.
Public/Granted literature
- US20160043094A1 SEMICONDUCTOR DEVICE, RELATED MANUFACTURING METHOD, AND RELATED ELECTRONIC DEVICE Public/Granted day:2016-02-11
Information query
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