Invention Grant
US09337234B2 Photoelectric converter, photoelectric converter array and imaging device
有权
光电转换器,光电转换器阵列和成像装置
- Patent Title: Photoelectric converter, photoelectric converter array and imaging device
- Patent Title (中): 光电转换器,光电转换器阵列和成像装置
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Application No.: US14349414Application Date: 2012-10-05
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Publication No.: US09337234B2Publication Date: 2016-05-10
- Inventor: Yutaka Hayashi , Toshitaka Ota , Yasushi Nagamune , Hirofumi Watanabe , Takaaki Negoro , Kazunari Kimino
- Applicant: Yutaka Hayashi , Toshitaka Ota , Yasushi Nagamune , Hirofumi Watanabe , Takaaki Negoro , Kazunari Kimino
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY,RICOH COMPANY, LTD.
- Current Assignee: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY,RICOH COMPANY, LTD.
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Cooper & Dunham LLP
- Priority: JP2011-222020 20111006
- International Application: PCT/JP2012/076557 WO 20121005
- International Announcement: WO2013/051734 WO 20130411
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H04N5/3745 ; H04N5/378 ; H01L27/144

Abstract:
A photoelectric converter includes a first pn junction comprised of at least two semiconductor regions of different conductivity types, and a first field-effect transistor including a first source connected with one of the semiconductor regions, a first drain, a first insulated gate and a same conductivity type channel as that of the one of the semiconductor regions. The first drain is supplied with a second potential at which the first pn junction becomes zero-biased or reverse-biased relative to a potential of the other of the semiconductor regions. When the first source turns to a first potential and the one of the semiconductor regions becomes zero-biased or reverse-biased relative to the other semiconductor regions, the first pn junction is controlled not to be biased by a deep forward voltage by supplying a first gate potential to the first insulated gate, even when either of the semiconductor regions is exposed to light.
Public/Granted literature
- US20140239158A1 PHOTOELECTRIC CONVERTER, PHOTOELECTRIC CONVERTER ARRAY AND IMAGING DEVICE Public/Granted day:2014-08-28
Information query
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