Invention Grant
- Patent Title: Electronic device having flash memory array formed in at different level than variable resistance memory cells
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Application No.: US14940513Application Date: 2015-11-13
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Publication No.: US09337239B2Publication Date: 2016-05-10
- Inventor: Hyung-Dong Lee
- Applicant: Sk hynix Inc.
- Applicant Address: KR Icheon
- Assignee: SK HYNIX INC.
- Current Assignee: SK HYNIX INC.
- Current Assignee Address: KR Icheon
- Priority: KR10-2013-0141374 20131120
- Main IPC: H01L27/24
- IPC: H01L27/24 ; G11C16/04 ; G11C13/00 ; G11C16/06 ; H01L27/115 ; H01L23/528 ; H01L29/788

Abstract:
An electronic device includes a memory. The memory includes a first cell array including a plurality of flash memory cells, a first peripheral circuit suitable for controlling the first cell array, a second cell array including a plurality of variable resistance memory cells, and a second peripheral circuit suitable for controlling the second cell array. The first cell array, the first peripheral circuit, and the second peripheral circuit are formed at a first level over a surface of a semiconductor substrate, and the second cell array is disposed at a second level over the surface of a semiconductor substrate, the second level being higher than the first level. A portion of the second cell array overlaps in a plan view the second peripheral circuit and/or the first cell array.
Public/Granted literature
Information query
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