A method of manufacturing a semiconductor device having a VDMOSFET (Vertical Double-diffused Metal Oxide Semiconductor Field-Effect Transistor) and a planar gate MOSFET (Metal Oxide Semiconductor Field-Effect Transistor), including forming a semiconductor layer of a first conductivity type by epitaxy, forming a body region recess for forming a body region of the VDMOSFET on the semiconductor layer, and embedding a semiconductor material of a second conductivity type in the body region recess by epitaxy or CVD (Chemical Vapor Deposition).