Invention Grant
US09337337B2 MOS device having source and drain regions with embedded germanium-containing diffusion barrier
有权
具有源极和漏极区域的具有嵌入的含锗扩散阻挡层的MOS器件
- Patent Title: MOS device having source and drain regions with embedded germanium-containing diffusion barrier
- Patent Title (中): 具有源极和漏极区域的具有嵌入的含锗扩散阻挡层的MOS器件
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Application No.: US13968751Application Date: 2013-08-16
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Publication No.: US09337337B2Publication Date: 2016-05-10
- Inventor: Tsz-Mei Kwok , Kun-Mu Li , Hsueh-Chang Sung , Chii-Horng Li , Tze-Liang Lee
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78
Abstract:
An integrated circuit structure includes a gate stack over a semiconductor substrate, and an opening extending into the semiconductor substrate, wherein the opening is adjacent to the gate stack. A first silicon germanium region is in the opening, wherein the first silicon germanium region has a first germanium percentage. A second silicon germanium region is over the first silicon germanium region, wherein the second silicon germanium region has a second germanium percentage higher than the first germanium percentage. A third silicon germanium region is over the second silicon germanium region, wherein the third silicon germanium region has a third germanium percentage lower than the second germanium percentage.
Public/Granted literature
- US20150048417A1 Germanium Barrier Embedded in MOS Devices Public/Granted day:2015-02-19
Information query
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