Invention Grant
- Patent Title: Semiconductor buffer structure, semiconductor device including the semiconductor buffer structure, and method of manufacturing the semiconductor device using the semiconductor buffer structure
- Patent Title (中): 半导体缓冲结构，包括半导体缓冲结构的半导体器件，以及使用半导体缓冲结构制造半导体器件的方法
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Application No.: US14484456Application Date: 2014-09-12
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Publication No.: US09337381B2Publication Date: 2016-05-10
- Inventor: Jun-youn Kim , Young-jo Tak , Jae-kyun Kim , Joo-sung Kim , Young-soo Park , Su-hee Chae
- Applicant: Jun-youn Kim , Young-jo Tak , Jae-kyun Kim , Joo-sung Kim , Young-soo Park , Su-hee Chae
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2013-0125542 20131021
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L33/00 ; H01L33/12 ; H01L21/02 ; H01L33/32
Abstract:
A semiconductor buffer structure includes a silicon substrate, a nucleation layer formed on the silicon substrate, and a buffer layer formed on the nucleation layer. The buffer layer includes a first layer formed of a nitride semiconductor material having a uniform composition rate, a second layer formed of the same material as the nucleation layer on the first layer, and a third layer formed of the same material with the same composition ratio as the first layer on the second layer.
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