Invention Grant
- Patent Title: Methods for producing new silicon light source and devices
- Patent Title (中): 生产新型硅光源和器件的方法
-
Application No.: US14397861Application Date: 2012-04-30
-
Publication No.: US09337395B2Publication Date: 2016-05-10
- Inventor: Seref Kalem
- Applicant: Seref Kalem
- Applicant Address: TR Ankara
- Assignee: TUBITAK
- Current Assignee: TUBITAK
- Current Assignee Address: TR Ankara
- Agent Gokalp Bayramoglu
- International Application: PCT/IB2012/052146 WO 20120430
- International Announcement: WO2013/164659 WO 20131107
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L33/40 ; H01L33/34 ; H01S5/183 ; H01S5/22 ; H01S5/30 ; H01S5/32 ; H01L29/78 ; H01L33/00 ; H01S5/02 ; H01S5/042 ; H01S5/187
Abstract:
The present invention relates to production method and device applications of a new silicon (Si) semiconductor light source that emits at a single wavelength at 1320 nm with a full width at half maximum (FWHM) of less than 200 nm and a photoluminescence quantum efficiency of greater than 50% at room temperature. The semiconductor that is the base for the new light source includes a surface which is treated by an acid vapor involving heavy water or Deuterium Oxide (D2O) and a surface layer producing the light source at 1320 nm.
Public/Granted literature
- US20150132870A1 METHODS FOR PRODUCING NEW SILICON LIGHT SOURCE AND DEVICES Public/Granted day:2015-05-14
Information query
IPC分类:
