Invention Grant
- Patent Title: Magnetic tunnel junction structure for MRAM device
- Patent Title (中): 用于MRAM器件的磁隧道结结构
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Application No.: US14492943Application Date: 2014-09-22
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Publication No.: US09337412B2Publication Date: 2016-05-10
- Inventor: Mustafa Pinarbasi , Bartek Kardasz
- Applicant: Spin Transfer Technologies, Inc.
- Applicant Address: US CA Fremont
- Assignee: SPIN TRANSFER TECHNOLOGIES, INC.
- Current Assignee: SPIN TRANSFER TECHNOLOGIES, INC.
- Current Assignee Address: US CA Fremont
- Agency: Kaye Scholer LLP
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L21/02 ; H01L29/82 ; H01L43/02 ; H01L43/10 ; H01L27/22 ; B82Y25/00
Abstract:
A magnetic tunnel junction stack is provided that includes nonmagnetic spacer layers between the free layer and the polarizer layer formed from magnesium oxide and tantalum nitride materials that balance the spin torques acting on the free layer. The design provided enables a deterministic final state for the storage layer and significantly improves the tunneling magnetoresistance value and switching characteristics of the magnetic tunnel junction for MRAM applications.
Public/Granted literature
- US20160087193A1 MAGNETIC TUNNEL JUNCTION STRUCTURE FOR MRAM DEVICE Public/Granted day:2016-03-24
Information query
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